RTP Q-Switch/Pockels Cell
RTP crystal is an isomorph of KTP crystal, boasting comprehensive advantages: large electro-optical coefficient, high damage threshold, high resistivity, wide transparent waveband (0.35 – 3.5μm), non-deliquescence, low insertion loss, and suitability for high repetition frequency applications. Additionally, it does not exhibit gray tracks under intense laser irradiation, making it an excellent material for fabricating electro-optical switches—especially ideal for high repetition frequency laser systems.
To compensate for static birefringence and minimize temperature-induced refractive index changes in the crystal, the two RTP crystals of the Q-switch are assembled with a 90° rotation around the optical axis. The RTP Q-switch leverages the crystal’s transverse electro-optical effect, with the applied electric field perpendicular to the optical path. Reducing the operating voltage can be achieved by adjusting the crystal’s cross-sectional size and optical path length.
It features good temperature stability, a small piezoelectric ringing effect, suitability for a wide operating temperature range and high repetition frequency scenarios, and is applied in aerospace, national defense, medical, industrial, scientific research and other fields.
Features
- Low operating voltage
- Wide wavelength range: 420 – 2800nm
- Typical laser wavelength: 755/1030/1064/1535/2100/2780nm
- Wide operating temperature range: -50℃～+70℃
- High resistivity:＞1011Ω•cm
- Low insertion loss：＜1%@1064nm
- Good stability：non-deliquescence
- No piezoelectric ringing effect, suitable for high repetition frequency applications (up to 100KHz)
Applications
- Laser Q-switching
- Pulse selector
- Phase modulation
- Cavity dumping
- Attenuator
Parameter
| Dimension Tolerance | W(+/-0.1) * H(+/-0.1) * L(+0.5/-0.1) mm | ||
| Angle Tolerance | +/- 0.15° | Perpendicularity | ≤ 10′ |
| Scratch / Dig | 20/10 | Chamfer | ≤ 0.2mmx45° |
| Parallelism | ≤ 5″ | Chip | ≤ 0.1mm |
| Flatness | λ/10@633nm | CA | ≥ 90% |
| TWD | λ/6@633nm | Electrode | Ti or Au |
| Extinction Ratio | > 20dB | ||
| Coating | AR@1064nm(R< 0.2%), or customized upon request | ||
| Damage Threshold | ＞ 8J/cm²@1064nm 10ns 10Hz | ||
Model
1.Stardard Products(1064nm)
| Size of Single Crystal(mm) | Length of Holder(mm) | Half-wave voltage(V) |
| 2X2X5 | 12 | 1600V |
| 3X3X5 | 14 | 2400V |
| 4X4X5 | 14 | 3200V |
| 4X4X10 | 25 | 1600V |
| 6X6X5 | 14 | 4800V |
| 6X6X10 | 25 | 2400V |
| 8X8X5 | 14 | 6400V |
| 8X8X10 | 25 | 3200V |
| 10X10X5 | 14 | 8000V |
2.Low-Pressure Products(1064nm)
In a low-pressure environment, gas molecules have a longer mean free path and fewer collisions, allowing electrons to easily gain sufficient energy to ionize. This can cause self-discharge of the RTP Q-Switch or discharge with other components, leading to laser system malfunction.
To ensure normal operation of the RTP Q-Switch even in an extremely low-pressure environment (2000Pa), Tuniu Optics can provide insulating low-pressure series products. Details are as follows:
| Specification | Capacitance | 1/4 Wave Voltage | Reference |
| 7x7x18 | ≤6pF | 1400±150V | No discharge@2500V&2000Pa |
| 8x8x25 | ≤6pF | 1600±150V | No discharge@2500V&2000Pa |
Note: 2000Pa corresponds to an altitude of approximately 26000m.
3.Slab Product(1064nm)
This series of products is designed and developed for slab lasers. Compared with the structure of conventional products, the operating voltage is halved, and the volume is more compact. Contact us for size details.
| Specification | Half-Wave Voltage | Capacitance |
| 8x4x13 | 3200V±15% | ≤6pF |
| 10x5x13 | 4000V±15% | ≤6pF |
| 12x6x13 | 4800V±15% | ≤6pF |
| 8x4x23 | 1600V±15% | ≤6pF |
| 10x5x23 | 2000V±15% | ≤6pF |
| 12x6x23 | 2400V±15% | ≤6pF |