LN (LiNbO3) Pockels Cell
The LN(LiNbO3) Pockels Cell, also known as Lithium Niobate Pockels Cell, is a high-performance Pockels Cell device widely used in optical communication, optical waveguide technology and other fields. It features high electro-optical coefficient, non-hygroscopicity, wide transparency range, and excellent mechanical and physical properties, making it suitable for applications such as electro-optical modulators, modulated resonator wave voltage external laser beams, etc.
Lithium niobate crystal is one of the most commonly used materials for Q-switches and phase modulators due to its high electro-optical coefficient, non-hygroscopicity, good transmission up to 4.0 µm, and transverse mode operation.
By applying an electric field transverse to the direction of light propagation, the LiNbO3 cell can be configured to operate at a lower voltage than KD*P cells. The LiNbO3 Pockels Cell supports infrared wavelength operation up to 4.0 µm, making it an excellent choice for low-to-medium power solid-state laser (Er:YAG, Ho:YAG, Tm:YAG pulsed lasers) applications. Meanwhile, compared with conventional undoped LiNbO3, MgO-doped LiNbO3 has a significantly higher damage threshold.
Features
- High-Speed Modulation Capability
- Wide Transmittance Range
- Low Driving Voltage
- Excellent Physicochemical Stability
Applications
- Laser Q-Switch
- Optical Switch/Optical Shutter
- Phase and Amplitude Modulator
- Polarization Controller
Model
| Aperture, mm | 2.5 | 5 | 8 | 9 |
| Size* | 55*28*24 mm | |||
| Wavelength, | 1064 nm | |||
| Electrode Type | Au/Cr | |||
| λ/2 Voltage (V@632.8 nm) | 400 | 800 | ||
| λ/4 Voltage (V@1064 nm) | 1800-1900 | 2100 | ||
| Insertion Loss | < 3% | |||
| Wavefront Distortion | < λ/8@632.8 nm | |||
| Extinction Ratio | 200:1 (Φ1 mm Area) | |||
| Capacitance | < 5 pF | |||
| Damage Threshold (@1064nm 10ns 10Hz) | 100 MW/cm2 | 200 MW/cm2 | ||
*Choose LN or MgO:LN; a cylindrical housing is also available for customization. Structural and functional parameters can be customized as needed.